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Characteristics:
| Maks.napr.k-e, The | 600 |
| saturation collector-emitter voltage, V | 1.7 |
| Rated current single tr-ra, And | 20 |
| The structure of the module | 3-phase bridge |
| Power Module Type | Intelligent DIP module |
| The maximum modulation frequency, kHz | 20 |
| Entrance gate capacity, nF | - |
| Drive power, kW | 1.5 |
| drivers | built-in |
| Current Protection | - |
| Short circuit protection | there is |
| overheat protection | - |
| Protection against low voltage | there is |
| Maximum Power dissipation W | 51.2 |
| Maximum emitter current, A | 40 |
| The maximum permissible gate-emitter voltage (- /), B | - |
| Emitter-collector voltage, V | - |
| pulse current rise time to the e-inductive loads, ns | 1300 |
| Insulation Voltage, | 1500 |
| Temperature Range, C | -20 ... 150 |
| Manufacturer | Mitsubishi Electric Semiconductor |
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